PART |
Description |
Maker |
EDX5116ACSE-4C-E EDX5116ACSE-3A-E EDX5116ACSE-3B-E |
512M bits XDR DRAM 512M bits XDR?/a> DRAM
|
Elpida Memory
|
EDX5116ADSE-3A-E EDX5116ADSE-3B-E EDX5116ADSE-3C-E |
512M bits XDR DRAM 512M bits XDR?/a> DRAM
|
Elpida Memory
|
ICS9214 |
Rambus XDR Clock Generator, 3:1, 4:1, 5:1, 6:1, 8:1, 9/2, 15/2 and 15/4 gear ratios From old datasheet system
|
ICS
|
K4S510732B K4S510732B-TC1H K4S510732B-TC1L K4S5107 |
Stacked 512Mbit SDRAM
|
Samsung semiconductor
|
HYB25D512160BE-6 HYB25D512800BE-5 HYB25D512160BC-5 |
512Mbit Double Data Rate SDRAM
|
INFINEON[Infineon Technologies AG]
|
H55S5162DFR-60M H55S5162DFR-75M H55S5162DFR-A3M |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
HY5S7B6ALFP-6 HY5S7B6ALFP-H HY5S7B6ALFP-S |
512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O
|
Hynix Semiconductor
|
EDX5116ABSE-3B-E EDX5116ABSE-3A-E EDX5116ABSE-3C-E |
512M bits XDR DRAM (32M words 16 bits) 32M X 16 RAMBUS, PBGA104
|
Elpida Memory, Inc. DRAM
|
CY24271 CY24271ZXC CY24271ZXCT |
Rambus? XDR Clock Generator Rambus㈢ XDR⑩ Clock Generator
|
Cypress Semiconductor
|
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic SAMSUNG[Samsung semiconductor]
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|